High spectral uniformity of AlGaN with a high Al content evidenced by scanning near-field photoluminescence spectroscopy
Abstract
Scanning near-field photoluminescence (PL) spectroscopy was applied to study spatial variations of emission spectra of AlxGa1−xN epilayers with 0.6≤x≤0.7. PL spectra were found to be spatially uniform with peak wavelength standard deviations of only ∼2 meV and ratios between peak intensity standard deviations and average peak intensity values of 0.06. The observed absence of correlation between the PL peak wavelength and intensity shows that spatial distribution of nonradiative recombination centers is not related to band potential fluctuations. Our results demonstrate that the homogeneous broadening and the random cation distribution primarily determine PL linewidths for layers grown under optimized conditions.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 15, 2014
- Source ID
- 10.1063/1.4904710
Entities
People
- Jeremy Yang
- M. Shatalov
- Michael Shur
- R. Gaska
- Rohit Jain
- S. Marcinkevičius
Organizations
- Rensselaer Polytechnic Institute
- Royal Institute of Technology
- Swedish Energy Agency
- Swedish Research Council
- United States Army Research Laboratory