Controlled removal of amorphous Se capping layer from a topological insulator
Abstract
We report on the controlled removal of an amorphous Se capping layer from Bi2Te3 and Bi2Se3 topological insulators. We show that the Se coalesces into micron-sized islands before desorbing from the surface at a temperature of ∼150 °C. In situ Auger Electron Spectroscopy reveals that Se replaces a significant fraction of the Te near the top surface of the Bi2Te3. Rutherford Backscattering Spectrometry and Transmission Electron Microscopy show that after heating, Se has been incorporated in the Bi2Te3 lattice down to ∼7 nm from its top surface while remaining iso-structural.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 15, 2014
- Source ID
- 10.1063/1.4904803
Entities
People
- Aakash Pushp
- Andrew Kellock
- Eugene Delenia
- James Harris
- Kumar Virwani
- Liam Collins-Mcintyre
- Philip Rice
- Sara E. Harrison
- Stuart Parkin
- Teya Topuria
- Thorsten Hesjedal
Organizations
- Defense Advanced Research Projects Agency
- International Business Machines Corporation (Armonk, NY)
- Stanford University
- University of Oxford