Increased InAs quantum dot size and density using bismuth as a surfactant
Abstract
We have investigated the growth of self-assembled InAs quantum dots using bismuth as a surfactant to control the dot size and density. We find that the bismuth surfactant increases the quantum dot density, size, and uniformity, enabling the extension of the emission wavelength with increasing InAs deposition without a concomitant reduction in dot density. We show that these effects are due to bismuth acting as a reactive surfactant to kinetically suppress the surface adatom mobility. This mechanism for controlling quantum dot density and size has the potential to extend the operating wavelength and enhance the performance of various optoelectronic devices.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 22, 2014
- Source ID
- 10.1063/1.4904825
Entities
People
- Dahee Jung
- E. M. Krivoy
- E. T. Yu
- H. P. Nair
- K. W. Park
- M. L. Lee
- S. J. Maddox
- Seth R. Bank
- Vaishno D. Dasika
Organizations
- Air Force Office of Scientific Research
- National Science Foundation
- University of Texas at Austin
- Yale University