Ion beam modification of topological insulator bismuth selenide
Abstract
We demonstrate chemical doping of a topological insulator Bi2Se3 using ion implantation. Ion beam-induced structural damage was characterized using grazing incidence X-ray diffraction and transmission electron microscopy. Ion damage was reversed using a simple thermal annealing step. Carrier-type conversion was achieved using ion implantation followed by an activation anneal in Bi2Se3 thin films. These two sets of experiments establish the feasibility of ion implantation for chemical modification of Bi2Se3, a prototypical topological insulator. Ion implantation can, in principle, be used for any topological insulator. The direct implantation of dopants should allow better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation also enables the fabrication of inhomogeneously doped structures, which in turn should make possible new types of device designs.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 15, 2014
- Source ID
- 10.1063/1.4904936
Entities
People
- A. L. Lima Sharma
- Douglas L. Medlin
- K. Erickson
- K. Hattar
- M. Brahlek
- M. Hekmaty
- N. Koirala
- P. A. Sharma
- R. Goeke
- Sangheon Oh
- V. Stavila
Organizations
- Office of Naval Research
- Rutgers University
- Sandia National Laboratories