Anisotropic spin dephasing of impurity-bound electron spins in ZnO

Abstract

We investigate the electron spin dynamics of n-type c-axis oriented bulk zinc oxide (ZnO) by using time-resolved Kerr rotation and resonant spin amplification measurements. Calculating resonant spin amplification using an anisotropic spin dephasing model reveals that there are two species involved in the spin dynamics, which we attribute to conduction and impurity-bound electron spins, respectively. We find that the impurity-bound electron spin dephasing mechanism is strongly anisotropic due to anisotropic exchange interactions. The identification of the two spin species and their dephasing mechanisms is further supported by the temperature, power, and wavelength dependence of the spin coherence measurements.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 05, 2015
Source ID
10.1063/1.4905278

Entities

People

  • Aneesh Venugopal
  • Jieun Lee
  • Vanessa Sih

Organizations

  • Air Force Office of Scientific Research
  • Defense Threat Reduction Agency
  • National Science Foundation
  • Office of Naval Research
  • University of Michigan

Tags

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics