Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node
Abstract
Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 05, 2015
- Source ID
- 10.1063/1.4905321
Entities
People
- Carl Bozler
- Daniel V. Harburg
- Fiorenzo Omenetto
- John A. Rogers
- Lan Yin
Organizations
- Defense Advanced Research Projects Agency
- Massachusetts Institute of Technology
- Tufts University
- University of Illinois Urbana–Champaign