Electrowetting on semiconductors

Abstract

Applying a voltage difference between a conductor and a sessile droplet sitting on a thin dielectric film separating it from the conductor will cause the drop to spread. When the conductor is a good metal, the change of the drop's contact angle due to the voltage is given by the Young-Lippmann (YL) equation. Here, we report experiments with lightly doped, single crystal silicon as the conductive electrode. We derive a modified YL equation that includes effects due to the semiconductor and contact line pinning. We show that light induces a non-reversible wetting transition, and that our model agrees well with our experimental results.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 05, 2015
Source ID
10.1063/1.4905348

Entities

People

  • Cesar Palma
  • Robert D Deegan

Organizations

  • Defense Advanced Research Projects Agency
  • University of Michigan

Tags

Readers

  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.
  • Plasma Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene