Simulation study of HEMT structures with HfO2 cap layer for mitigating inverse piezoelectric effect related device failures
Abstract
The Inverse Piezoelectric Effect (IPE) is thought to contribute to possible device failure of GaN High Electron Mobility Transistors (HEMTs). Here we focus on a simulation study to probe the possible mitigation of the IPE by reducing the internal electric fields and related elastic energy through the use of high-k materials. Inclusion of a HfO2 “cap layer” above the AlGaN barrier particularly with a partial mesa structure is shown to have potential advantages. Simulations reveal even greater reductions in the internal electric fields by using “field plates” in concert with high-k oxides.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2015
- Source ID
- 10.1063/1.4905702
Entities
People
- Aswini Pradhan
- Deepthi Nagulapally
- R. P. Joshi
Organizations
- Army Research Office
- Norfolk State University
- Old Dominion University