Voltage control of magnetism in FeGaB/PIN-PMN-PT multiferroic heterostructures for high-power and high-temperature applications
Abstract
We report strong voltage tuning of magnetism in FeGaB deposited on [011]-poled Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) ternary single crystals to achieve more than 2 times broader operational range and increased thermal stability as compared to heterostructures based on binary relaxors. Voltage-induced effective ferromagnetic resonance field shift of 180 Oe for electric field from −6.7 kV/cm to 11 kV/cm was observed in FeGaB/PIN-PMN-PT heterostructures. This strong magnetoelectric coupling combined with excellent electric and temperature stability makes FeGaB/PIN-PMN-PT heterostructures potential candidates for high-power tunable radio frequency/microwave magnetic device applications.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 12, 2015
- Source ID
- 10.1063/1.4905855
Entities
People
- Margo Staruch
- Nian X. Sun
- Peter Finkel
- Tianxiang Nan
- Xinjun Wang
- Yuan Gao
- Zhongqiang Hu
Organizations
- Air Force Research Laboratory
- National Natural Science Foundation of China
- National Research Council
- Northeastern University
- Office of Naval Research
- United States Naval Research Laboratory