An electrically injected rolled-up semiconductor tube laser
Abstract
We have demonstrated electrically injected rolled-up semiconductor tube lasers, which are formed when a coherently strained InGaAs/InGaAsP quantum well heterostructure is selectively released from the underlying InP substrate. The device exhibits strong coherent emission in the wavelength range of ∼1.5 μm. A lasing threshold of ∼1.05 mA is measured for a rolled-up tube with a diameter of ∼5 μm and wall thickness of ∼140 nm at 80 K. The Purcell factor is estimated to be ∼4.3.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 12, 2015
- Source ID
- 10.1063/1.4906238
Entities
People
- M. Djavid
- M. H. T. Dastjerdi
- Z. Mi
Organizations
- Army Research Office
- Canadian Network for Research and Innovation in Machining Technology, Natural Sciences and Engineering Research Council of Canada
- McGill University