Current gain in sub-10 nm base GaN tunneling hot electron transistors with AlN emitter barrier
Abstract
We report on Gallium Nitride-based tunneling hot electron transistor amplifier with common-emitter current gain greater than 1. Small signal current gain up to 5 and dc current gain of 1.3 were attained in common-emitter configuration with collector current density in excess of 50 kA/cm2. The use of a combination of 1 nm GaN/3 nm AlN layers as an emitter tunneling barrier was found to improve the energy collimation of the injected electrons. These results represent demonstration of unipolar vertical transistors in the III-nitride system that can potentially lead to higher frequency and power microwave devices.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 19, 2015
- Source ID
- 10.1063/1.4906287
Entities
People
- Digbijoy N. Nath
- Jacob B Khurgin
- Siddharth Rajan
- Yuewei Zhang
- Zhichao Yang
Organizations
- Johns Hopkins University
- Office of Naval Research
- Ohio State University