Synthesis and ionic liquid gating of hexagonal WO3 thin films
Abstract
Via thin film deposition techniques, the meta-stable in bulk crystal hexagonal phase of tungsten oxide (hex-WO3) is stabilized as a thin film. The hex-WO3 structure is potentially promising for numerous applications and is related to the structure for superconducting compounds found in WO3. Utilizing ionic liquid gating, carriers were electrostatically induced in the films and an insulator-to-metal transition is observed. These results show that ionic liquid gating is a viable technique to alter the electrical transport properties of WO3.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 26, 2015
- Source ID
- 10.1063/1.4906610
Entities
People
- Kazuyasu Tokiwa
- Kenji Tanabe
- Ko Munakata
- Malcolm Beasley
- Phillip M Wu
- R. H. Hammond
- Satoshi Ishii
- Theodore H. Geballe
Organizations
- Air Force Office of Scientific Research
- Stanford University
- Tokyo University of Science