Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and 15N isotopes
Abstract
This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual marker method for Raman spectroscopy. By combining these techniques, we demonstrate the effectiveness in studying strain in the vertical direction. This technique will enable the precise probing of properties of buried active layers in heterostructures, and can be extended in the future to vertical devices such as those used for optical emitters and for power electronics.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 26, 2015
- Source ID
- 10.1063/1.4906900
Entities
People
- Alexander Mintairov
- Bo Song
- Debdeep Jena
- Guowang Li
- Huili Grace Xing
- Jai Verma
- Meng Qi
- Mingda Zhu
- Pei Zhao
- Satyaki Ganguly
- Vladimir Protasenko
- Xiaodong Yan
- Zongyang Hu
Organizations
- Ioffe Institute
- Office of Naval Research
- Semiconductor Research Corporation
- University of Notre Dame