Highly crystalline MoS2 thin films grown by pulsed laser deposition
Abstract
Highly crystalline thin films of MoS2 were prepared over large area by pulsed laser deposition down to a single monolayer on Al2O3 (0001), GaN (0001), and SiC-6H (0001) substrates. X-ray diffraction and selected area electron diffraction studies show that the films are quasi-epitaxial with good out-of-plane texture. In addition, the thin films were observed to be highly crystalline with rocking curve full width half maxima of 0.01°, smooth with a RMS roughness of 0.27 nm, and uniform in thickness based on Raman spectroscopy. From transport measurements, the as-grown films were found to be p-type.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 02, 2015
- Source ID
- 10.1063/1.4907169
Entities
People
- Anthony M. Diamond
- C R Serrao
- Carlo Carraro
- Chenming Hu
- James Clarkson
- Long You
- Roya Maboudian
- S.B. Gadgil
- Sayeef Salahuddin
- Shang-Lin Hsu
Organizations
- Army Research Office
- National Science Foundation
- University of California