Local strain effect on the band gap engineering of graphene by a first-principles study

Abstract

We have systematically investigated the effect of local strain on electronic properties of graphene by first-principles calculations. Two major types of local strain, oriented along the zigzag and the armchair directions, have been studied. We find that local strain with a proper range and strength along the zigzag direction results in opening of significant band gaps in graphene, on the order of 10−1 eV; whereas, local strain along the armchair direction cannot open a significant band gap in graphene. Our results show that appropriate local strain can effectively open and tune the band gap in graphene; therefore, the electronic and transport properties of graphene can also be modified.

Document Details

Document Type
Pub Defense Publication
Publication Date
Feb 02, 2015
Source ID
10.1063/1.4907410

Entities

People

  • Dane Morgan
  • Gui Gui
  • Jianxin Zhong
  • John H. Booske
  • Zhenqiang Ma

Organizations

  • Office of Naval Research
  • University of Wisconsin–Madison
  • Xiangtan University

Tags

Fields of Study

  • Physics

Readers

  • Mechanical Engineering/Mechanics of Materials.
  • Nanocomposite Materials Science
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene