Frequency-dependent polarization-angle-phase-shift in the microwave-induced magnetoresistance oscillations
Abstract
Linear polarization angle, θ, dependent measurements of the microwave radiation-induced oscillatory magnetoresistance, Rxx, in high mobility GaAs/AlGaAs 2D electron devices have shown a θ dependence in the oscillatory amplitude along with magnetic field, frequency, and extrema-dependent phase shifts, θ0. Here, we suggest a microwave frequency dependence of θ0(f) using an analysis that averages over other smaller contributions, when those contributions are smaller than estimates of the experimental uncertainty.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 09, 2015
- Source ID
- 10.1063/1.4907564
Entities
People
- Han-Chun Liu
- R. G. Mani
- Tianyu Ye
- W. Wegscheider
Organizations
- Army Research Office
- ETH Zurich
- Georgia State University
- United States Department of Energy