Hot-electron energy relaxation time in Ga-doped ZnO films
Abstract
Hot-electron energy relaxation time is deduced for Ga-doped ZnO epitaxial layers from pulsed hot-electron noise measurements at room temperature. The relaxation time increases from ∼0.17 ps to ∼1.8 ps when the electron density increases from 1.4 × 1017 cm−3 to 1.3 × 1020 cm−3. A local minimum is resolved near an electron density of 1.4 × 1019 cm−3. The longest energy relaxation time (1.8 ps), observed at the highest electron density, is in good agreement with the published values obtained by optical time-resolved luminescence and absorption experiments. Monte Carlo simulations provide a qualitative interpretation of our observations if hot-phonon accumulation is taken into account. The local minimum of the electron energy relaxation time is explained by the ultrafast plasmon-assisted decay of hot phonons in the vicinity of the plasmon–LO-phonon resonance.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 12, 2015
- Source ID
- 10.1063/1.4907907
Entities
People
- A. Matulionis
- E. Šermukšnis
- H. Morkoc
- H. Y. Liu
- J. Liberis
- M. Ramonas
- M. Toporkov
- V. Avrutin
- Ümit Özgür
Organizations
- Air Force Office of Scientific Research
- Virginia Commonwealth University