Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors
Abstract
We present an extensive characterization of the minority carrier transport properties in an nBn mid-wave infrared detector incorporating a Ga-free InAs/InAsSb type-II superlattice as the absorbing region. Using a modified electron beam induced current technique in conjunction with time-resolved photoluminescence, we were able to determine several important transport parameters of the absorber region in the device, which uses a barrier layer to reduce dark current. For a device at liquid He temperatures, we report a minority carrier diffusion length of 750 nm and a minority carrier lifetime of 200 ns, with a vertical diffusivity of 3 × 10−2 cm2/s. We also report on the device's optical response characteristics at 78 K.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 16, 2015
- Source ID
- 10.1063/1.4913312
Entities
People
- B. V. Olson
- Daniel Wasserman
- Daniel Zuo
- Emil A. Kadlec
- Eric A. Shaner
- James Mabon
- Runyu Liu
- S. Liu
- Yong-hang Zhang
- Zhao-yu He
Organizations
- Arizona State University
- Army Research Office
- Sandia National Laboratories
- United States Department of Energy
- University of Illinois Urbana–Champaign