Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate
Abstract
Inversion-mode GaAs wave-shaped metal-oxide-semiconductor field-effect transistors (WaveFETs) are demonstrated using atomic-layer epitaxy of La2O3 as gate dielectric on (111)A nano-facets formed on a GaAs (100) substrate. The wave-shaped nano-facets, which are desirable for the device on-state and off-state performance, are realized by lithographic patterning and anisotropic wet etching with optimized geometry. A well-behaved 1 μm gate length GaAs WaveFET shows a maximum drain current of 64 mA/mm, a subthreshold swing of 135 mV/dec, and an ION/IOFF ratio of greater than 107.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 16, 2015
- Source ID
- 10.1063/1.4913431
Entities
People
- Heng Wu
- Jiayi Shao
- Jingyun Zhang
- Mengwei Si
- Michael J Manfra
- Peide Ye
- Roy G. Gordon
- Xiabing Lou
Organizations
- Air Force Office of Scientific Research
- Harvard University
- Purdue University