KOH based selective wet chemical etching of AlN, AlxGa1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode
Abstract
A controllable and smooth potassium hydroxide-based wet etching technique was developed for the AlGaN system. High selectivity between AlN and AlxGa1−xN (up to 12×) was found to be critical in achieving effective substrate thinning or removal for AlGaN-based deep ultraviolet light emitting diodes, thus increasing light extraction efficiency. The mechanism of high selectivity of AlGaN as a function of Al composition can be explained as related to the formation and dissolution of oxide/hydroxide on top of N-polar surface. Cross-sectional transmission electron microscopic analysis served as ultimate proof that these hillocks were not related to underlying threading dislocations.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 23, 2015
- Source ID
- 10.1063/1.4913705
Entities
People
- I. Bryan
- J. Tweedie
- L. Hussey
- Pramod Reddy
- Ramón Collazo
- Ronny Kirste
- Wei Guo
- Z. Bryan
- Zlatko Sitar
Organizations
- Defense Advanced Research Projects Agency
- National Science Foundation
- North Carolina State University