Ferroelectric and magnetic properties of multiferroic BiFeO3-La0.7Sr0.3MnO3 heterostructures integrated with Si (100)
Abstract
We report on the electrical, ferroelectric, and magnetic properties of BiFeO3 (BFO)-La0.7Sr0.3MnO3 heterostructures deposited epitaxially onto Si(100) substrates. Temperature dependent (200–350 K) current-voltage (I-V), switching spectroscopy piezo-response force microscopy (SSPFM), and temperature dependent (5–300 K) anisotropic magnetization measurements have been performed. The BFO (100-nm thick)-based device structures were fabricated with a 250 nm thick La0.7Sr0.3MnO3 bottom electrode and 200 μm circular top Pt electrodes. I-V measurements performed at various temperatures indicated that the devices retained their as-deposited characteristics and exhibited non-leaky behavior up to at least 50 cycles. The temperature-dependent measurements showed clear diode-like behavior and resistive (hysteretic) switching behaviour. Characteristic butterfly loops (of several cycles) were observed in the PFM amplitude signals of the BFO film. In addition, the phase signal indicated a clear (180°) switching behavior at the switching voltage of 4–5 V, providing unambiguous evidence for the occurrence of ferroelectricity in BFO films integrated on Si (100). The temperature- and angle-dependent zero field cooled isothermal (5 K) magnetization measurements were consistent with the presence of uniaxial magnetic anisotropy. This work makes an important step for the fabrication of CMOS-compatible BFO devices for memory applications.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 04, 2015
- Source ID
- 10.1063/1.4913811
Entities
People
- Bongmook Lee
- D. Kumar
- J. T. Prater
- Jagdish Narayan
- S. Nori
- Srinivasa Rao Singamaneni
- V. Misra
Organizations
- Army Research Office
- North Carolina Agricultural and Technical State University
- North Carolina State University
- United States Army Research Laboratory