Metal insulator semiconductor solar cell devices based on a Cu2O substrate utilizing h-BN as an insulating and passivating layer
Abstract
We demonstrate cuprous oxide (Cu2O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu2O layer. The devices are the most efficient of any Cu2O based MIS-Schottky solar cells reported to date.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 09, 2015
- Source ID
- 10.1063/1.4914181
Entities
People
- Alex Zettl
- Ashley Gibb
- Onur Ergen
- Oscar Vazquez-Mena
- William Regan
Organizations
- Lawrence Berkeley National Laboratory
- National Science Foundation
- Office of Naval Research
- University of California, Berkeley