LaTiO3/KTaO3 interfaces: A new two-dimensional electron gas system
Abstract
We report a new 2D electron gas (2DEG) system at the interface between a Mott insulator, LaTiO3, and a band insulator, KTaO3. For LaTiO3/KTaO3 interfaces, we observe metallic conduction from 2 K to 300 K. One serious technological limitation of SrTiO3-based conducting oxide interfaces for electronics applications is the relatively low carrier mobility (0.5-10 cm2/V s) of SrTiO3 at room temperature. By using KTaO3, we achieve mobilities in LaTiO3/KTaO3 interfaces as high as 21 cm2/V s at room temperature, over a factor of 3 higher than observed in doped bulk SrTiO3. By density functional theory, we attribute the higher mobility in KTaO3 2DEGs to the smaller effective mass for electrons in KTaO3.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 01, 2015
- Source ID
- 10.1063/1.4914310
Entities
People
- C. H. Ahn
- Dong Su
- F. J. Walker
- Ke Zou
- Kim Kisslinger
- Sohrab Ismail-Beigi
- Xuan Shen
Organizations
- Air Force Office of Scientific Research
- Brookhaven National Laboratory
- Nanjing University
- National Science Foundation
- Yale University