Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence
Abstract
We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 09, 2015
- Source ID
- 10.1063/1.4914895
Entities
People
- Baolai Liang
- Bor-chau Juang
- Diana L. Huffaker
- Hai-ming Ji
- Paul J. Simmonds
- Robert J Young
- Tao Yang
Organizations
- Chinese Academy of Sciences
- National Natural Science Foundation of China
- United States Department of Defense
- University of California, Los Angeles
- University of Lancaster