Deuterium absorption from the D2O exposure of oxidized 4H-SiC (0001), (0001¯), and (112¯) surfaces
Abstract
We report results on deuterium absorption on several oxidized 4H-SiC surfaces following D2O vapor absorption. Absorption at the oxide/semiconductor interface is strongly face dependent with an order of magnitude more deuterium on the C-face and a-face than on the Si-face, in contrast to the bulk of the oxides which show essentially no face dependence. Annealing in NO gas produces a large reduction in interfacial deuterium absorption in all cases. The reduction of the positive charge at the interface scales linearly with the interface D content. These results also scale with the variation in interface trap density (Dit) and mobility on the three faces after wet oxidation annealing.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 23, 2015
- Source ID
- 10.1063/1.4916266
Entities
People
- Boris Yakshinskiy
- Can Xu
- G. Liu
- Joseph Bloch
- L. C. Feldman
- Leszek Wielunski
- Sarit Dhar
- Torgny Gustafsson
Organizations
- Auburn University
- National Science Foundation
- Rutgers University
- United States Army Research Laboratory