Movement of basal plane dislocations in GaN during electron beam irradiation
Abstract
The movement of basal plane segments of dislocations in low-dislocation-density GaN films grown by epitaxial lateral overgrowth as a result of irradiation with the probing beam of a scanning electron microscope was detected by means of electron beam induced current. Only a small fraction of the basal plane dislocations was susceptible to such changes and the movement was limited to relatively short distances. The effect is explained by the radiation enhanced dislocation glide for dislocations pinned by two different types of pinning sites: a low-activation-energy site and a high-activation-energy site. Only dislocation segments pinned by the former sites can be moved by irradiation and only until they meet the latter pinning sites.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 30, 2015
- Source ID
- 10.1063/1.4916632
Entities
People
- A. Y. Polyakov
- E. B. Yakimov
- In-hwan Lee
- P. S. Vergeles
- S. J. Pearton
Organizations
- Defense Threat Reduction Agency
- Jeonbuk National University
- Ministry of Education and Science of the Russian Federation
- National University of Science and Technology
- Russian Academy of Sciences
- University of Florida