Localized conductive patterning via focused electron beam reduction of graphene oxide
Abstract
We report on a method for “direct-write” conductive patterning via reduction of graphene oxide (GO) sheets using focused electron beam induced deposition (FEBID) of carbon. FEBID treatment of the intrinsically dielectric graphene oxide between two metal terminals opens up the conduction channel, thus enabling a unique capability for nanoscale conductive domain patterning in GO. An increase in FEBID electron dose results in a significant increase of the domain electrical conductivity with improving linearity of drain-source current vs. voltage dependence, indicative of a change of graphene oxide electronic properties from insulating to semiconducting. Density functional theory calculations suggest a possible mechanism underlying this experimentally observed phenomenon, as localized reduction of graphene oxide layers via interactions with highly reactive intermediates of electron-beam-assisted dissociation of surface-adsorbed hydrocarbon molecules. These findings establish an unusual route for using FEBID as nanoscale lithography and patterning technique for engineering carbon-based nanomaterials and devices with locally tailored electronic properties.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 30, 2015
- Source ID
- 10.1063/1.4917038
Entities
People
- Andrei G Fedorov
- Dhaval D. Kulkarni
- Mathias Henry
- Paul Zackowski
- Seung Soon Jang
- Songkil Kim
- Vladimir V. Tsukruk
Organizations
- Air Force Office of Scientific Research
- Georgia Tech
- Semiconductor Research Corporation