Highly temperature insensitive, low threshold-current density (λ = 8.7–8.8 μm) quantum cascade lasers

Abstract

By stepwise tapering, both the barrier heights and quantum-well depths in the active regions of 8.7–8.8 μm-emitting quantum-cascade-laser (QCL) structures, virtually complete carrier-leakage suppression is achieved. Such step-taper active-region-type QCLs possess, for 3 mm-long devices with high-reflectivity-coated back facets, threshold-current characteristic temperature coefficients, T0, as high as 283 K and slope-efficiency characteristic temperature coefficients, T1, as high as 561 K, over the 20–60 °C heatsink-temperature range. These high T0 and T1 values reflect at least a factor of four reduction in carrier-leakage current compared to conventional 8–9 μm-emitting QCLs. Room temperature, pulsed, threshold-current densities are 1.58 kA/cm2; values comparable to those for 35-period conventional QCLs of similar injector-region doping level. Superlinear behavior of the light-current curves is shown to be the result of the onset of resonant extraction from the lower laser level at a drive level of ∼1.3× threshold. Maximum room-temperature slope efficiencies are 1.23 W/A; that is, slope efficiency per period values of 35 mW/A, which are 37%–40% higher than for same-geometry conventional 8–9 μm-emitting QCLs. Since the waveguide-loss coefficients are very similar, we estimate that the internal differential efficiency is at least 30% higher than in conventional QCLs. Such high internal differential efficiency values reflect the combined effect of nearly complete carrier-leakage suppression and high differential efficiency of the laser transition (∼90%), due to resonant extraction from the lower laser level.

Document Details

Document Type
Pub Defense Publication
Publication Date
Apr 13, 2015
Source ID
10.1063/1.4917499

Entities

People

  • C. Boyle
  • C.-c. Chang
  • D. Botez
  • D. Lindberg Iii
  • Jeremy D. Kirch
  • L. J. Mawst
  • T. Earles

Organizations

  • United States Army
  • University of Wisconsin–Madison

Tags

Readers

  • Molecular Photonics/Laser Physics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Quantum Computing