Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing
Abstract
The recovery effects of thermal annealing on dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors were investigated. After stress, reverse gate leakage current and sub-threshold swing increased and drain current on-off ratio decreased. However, these degradations were completely recovered after thermal annealing at 450 °C for 10 mins for devices stressed either once or twice. The trap densities, which were estimated by temperature-dependent drain-current sub-threshold swing measurements, increased after off-state step-stress and were reduced after subsequent thermal annealing. In addition, the small signal rf characteristics of stressed devices were completely recovered after thermal annealing.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 13, 2015
- Source ID
- 10.1063/1.4918530
Entities
People
- Byung-jae Kim
- Chen Dong
- David J Smith
- Fan Ren
- Jihyun Kim
- Kevin S. Jones
- Liu Lu
- M. R. Holzworth
- Ming-lan Zhang
- Shihyun Ahn
- Stephen Pearton
- Weidi Zhu
- Ya-hsi Hwang
Organizations
- Arizona State University
- Hebei University of Technology
- Korea University
- National Science Foundation
- United States Department of Defense
- University of Florida