Anti-damping spin transfer torque through epitaxial nickel oxide

Abstract

We prepare the high quality epitaxial MgO(001)[100]/Pt(001)[100]/NiO(001)[100]/FeNi/SiO2 films to investigate the spin transport in the NiO antiferromagnetic insulator. The ferromagnetic resonance measurements of the FeNi under a spin current injection from the Pt by the spin Hall effect revealed the change of the ferromagnetic resonance linewidth depending on the amount of the spin current injection. The results can be interpreted that there is an angular momentum transfer through the NiO. A high efficient angular momentum transfer we observed in the epitaxial NiO can be attributed to the well-defined orientation of the antiferromagnetic moments and the spin quantization axis of the injected spin current.

Document Details

Document Type
Pub Defense Publication
Publication Date
Apr 20, 2015
Source ID
10.1063/1.4918990

Entities

People

  • Masaki Nagata
  • Noriko Matsuzaki
  • So Takei
  • Takahiro Moriyama
  • Takahito Terashima
  • Teruo Ono
  • Yaroslav Tserkovnyak
  • Yoko Yoshimura

Organizations

  • Defense Advanced Research Projects Agency
  • Japan Society for the Promotion of Science
  • Kyoto University
  • University of California

Tags

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene