Interface-induced heavy-hole/light-hole splitting of acceptors in silicon
Abstract
The energy spectrum of spin-orbit coupled states of individual sub-surface boron acceptor dopants in silicon have been investigated using scanning tunneling spectroscopy at cryogenic temperatures. The spatially resolved tunnel spectra show two resonances, which we ascribe to the heavy- and light-hole Kramers doublets. This type of broken degeneracy has recently been argued to be advantageous for the lifetime of acceptor-based qubits [R. Ruskov and C. Tahan, Phys. Rev. B 88, 064308 (2013)]. The depth dependent energy splitting between the heavy- and light-hole Kramers doublets is consistent with tight binding calculations, and is in excess of 1 meV for all acceptors within the experimentally accessible depth range (<2 nm from the surface). These results will aid the development of tunable acceptor-based qubits in silicon with long coherence times and the possibility for electrical manipulation.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 18, 2015
- Source ID
- 10.1063/1.4921640
Entities
People
- G. Klimeck
- J. A. Miwa
- J. A. Mol
- J. Salfi
- M. Y. Simmons
- R. Rahman
- Sven Rogge
- Yu‐Ling Hsueh
Organizations
- Aarhus University
- Army Research Office
- Australian Research Council
- European Research Council
- Purdue University
- Royal Society
- University of New South Wales
- University of Oxford