Ferromagnetism in Cr-doped topological insulator TlSbTe2

Abstract

We have synthesized a new ferromagnetic topological insulator by doping Cr to the ternary topological-insulator material TlSbTe2. Single crystals of Tl1−xCrxSbTe2 were grown by a melting method and it was found that Cr can be incorporated into the TlSbTe2 matrix only within the solubility limit of about 1%. The Curie temperature θC was found to increase with the Cr content but remained relatively low, with the maximum value of about 4 K. The easy axis was identified to be the c-axis and the saturation moment was 2.8 μB (Bohr magneton) at 1.8 K. The in-plane resistivity of all the samples studied showed metallic behavior with p-type carriers. Shubnikov-de Hass oscillations were observed in samples with the Cr-doping level of up to 0.76%. We also tried to induce ferromagnetism in TlBiTe2 by doping Cr, but no ferromagnetism was observed in Cr-doped TlBiTe2 crystals within the solubility limit of Cr which turned out to be also about 1%.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jun 03, 2015
Source ID
10.1063/1.4922002

Entities

People

  • A. A. Taskin
  • Kouji Segawa
  • Satoshi Sasaki
  • Yoichi Ando
  • Zhiwei Wang

Organizations

  • Air Force Office of Scientific Research
  • Japan Society for the Promotion of Science
  • Ministry of Education, Culture, Sports, Science and Technology
  • Osaka University

Tags

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Superconducting Magnet Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene