Tunable biaxial in-plane compressive strain in a Si nanomembrane transferred on a polyimide film

Abstract

A method of creating tunable and programmable biaxial compressive strain in silicon nanomembranes (Si NMs) transferred onto a Kapton® HN polyimide film has been demonstrated. The programmable biaxial compressive strain (up to 0.54%) was generated utilizing a unique thermal property exhibited by the Kapton HN film, namely, it shrinks from its original size when exposed to elevated temperatures. The correlation between the strain and the annealing temperature was carefully investigated using Raman spectroscopy and high resolution X-ray diffraction. It was found that various amounts of compressive strains can be obtained by controlling the thermal annealing temperatures. In addition, a numerical model was used to evaluate the strain distribution in the Si NM. This technique provides a viable approach to forming in-plane compressive strain in NMs and offers a practical platform for further studies in strain engineering.

Document Details

Document Type
Pub Defense Publication
Publication Date
May 25, 2015
Source ID
10.1063/1.4922043

Entities

People

  • Hongyi Mi
  • Jung-Hun Seo
  • Minkyu Cho
  • Munho Kim
  • Shaoqin Gong
  • Weidong Zhou
  • Zhenqiang Ma

Organizations

  • Air Force Office of Scientific Research
  • University of Texas at Arlington
  • University of Wisconsin–Madison

Tags

Readers

  • Distributed Systems and Data Platform Development
  • Mechanical Engineering/Mechanics of Materials.
  • Semiconductor Device Technology