Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN
Abstract
We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5–6 × 1019 cm−3 as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration was 1.6 × 1018 cm−3. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 01, 2015
- Source ID
- 10.1063/1.4922216
Entities
People
- Erin C. H. Kyle
- Erin C. Young
- James S. Speck
- Stephen W. Kaun
Organizations
- Defense Threat Reduction Agency
- National Science Foundation
- Office of Naval Research
- University of California