Growth and characterization of (110) InAs quantum well metamorphic heterostructures
Abstract
An understanding of the growth of (110) quantum wells (QWs) is of great importance to spin systems due to the observed long spin relaxation times. In this article, we report on the metamorphic growth and characterization of high mobility undoped InAs (110) QWs on GaAs (110) substrates. A low-temperature nucleation layer reduces dislocation density, results in tilting of the subsequent buffer layer and increases the electron mobility of the QW structure. The mobility varies widely and systematically (4000–16 000 cm2/Vs at room temperature) with deposition temperature and layer thicknesses. Low-temperature transport measurements exhibit Shubnikov de-Haas oscillations and quantized plateaus in the quantum Hall regime.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 28, 2015
- Source ID
- 10.1063/1.4922985
Entities
People
- Adrian Podpirka
- Brian R. Bennett
- Chris J. Palmstrøm
- Javad Shabani
- M. E. Twigg
- Michael B. Katz
- Shawn Mack
Organizations
- Office of Naval Research
- United States Naval Research Laboratory
- University of California