Characterizing the structure of topological insulator thin films
Abstract
We describe the characterization of structural defects that occur during molecular beam epitaxy of topological insulator thin films on commonly used substrates. Twinned domains are ubiquitous but can be reduced by growth on smooth InP (111)A substrates, depending on details of the oxide desorption. Even with a low density of twins, the lattice mismatch between (Bi, Sb)2Te3 and InP can cause tilts in the film with respect to the substrate. We also briefly discuss transport in simultaneously top and back electrically gated devices using SrTiO3 and the use of capping layers to protect topological insulator films from oxidation and exposure.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 08, 2015
- Source ID
- 10.1063/1.4926455
Entities
People
- Abhinav Kandala
- Anthony Richardella
- Joon Sue Lee
- Nitin Samarth
Organizations
- Army Research Office
- Defense Advanced Research Projects Agency
- Office of Naval Research
- Pennsylvania State University
- Semiconductor Research Corporation