Carrier lifetimes and interface recombination velocities in CdTe/MgxCd1−xTe double heterostructures with different Mg compositions grown by molecular beam epitaxy
Abstract
The interface recombination velocities of CdTe/MgxCd1−xTe double heterostructure (DH) samples with different CdTe layer thicknesses and Mg compositions are studied using time-resolved photoluminescence measurements. A lowest interface recombination velocity of 30 ± 10 cm/s has been measured for the CdTe/Mg0.46Cd0.54Te interface, and a longest carrier lifetime of 0.83 μs has been observed for the studied DHs. These values are very close to the best reported numbers for GaAs/AlGaAs DHs. The impact of carrier escape through thermionic emission over the MgCdTe barrier on the recombination process in the DHs is also studied.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 27, 2015
- Source ID
- 10.1063/1.4927757
Entities
People
- Calli M. Campbell
- Maxwell B. Lassise
- S. Liu
- Xin-hao Zhao
- Yong-hang Zhang
- Yuan Zhao
Organizations
- Air Force Office of Scientific Research
- Arizona State University