Highly stretchable carbon nanotube transistors enabled by buckled ion gel gate dielectrics
Abstract
Deformable field-effect transistors (FETs) are expected to facilitate new technologies like stretchable displays, conformal devices, and electronic skins. We previously demonstrated stretchable FETs based on buckled thin films of polyfluorene-wrapped semiconducting single-walled carbon nanotubes as the channel, buckled metal films as electrodes, and unbuckled flexible ion gel films as the dielectric. The FETs were stretchable up to 50% without appreciable degradation in performance before failure of the ion gel film. Here, we show that by buckling the ion gel, the integrity and performance of the nanotube FETs are extended to nearly 90% elongation, limited by the stretchability of the elastomer substrate. The FETs maintain an on/off ratio of >104 and a field-effect mobility of 5 cm2 V−1 s−1 under elongation and demonstrate invariant performance over 1000 stretching cycles.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 03, 2015
- Source ID
- 10.1063/1.4928041
Entities
People
- Feng Xu
- Juan Zhao
- Meng-yin Wu
- Michael S Arnold
- Robert M Jacobberger
- Tzu-hsuan Chang
- Zhenqiang Ma
Organizations
- Air Force Office of Scientific Research
- Army Research Office
- United States Department of Defense
- United States Department of Energy
- University of Electronic Science and Technology of China
- University of Wisconsin–Madison