Dielectric response of metal/SrTiO3/two-dimensional electron liquid heterostructures
Abstract
Maximizing the effective dielectric constant of the gate dielectric stack is important for electrostatically controlling high carrier densities inherent to strongly correlated materials. SrTiO3 is uniquely suited for this purpose, given its extremely high dielectric constant, which can reach 104. Here, we present a systematic study of the thickness dependence of the dielectric response and leakage of SrTiO3 that is incorporated into a vertical structure on a high-carrier-density two-dimensional electron liquid (2DEL). A simple model can be used to interpret the data. The results show a need for improved interface control in the design of metal/SrTiO3/2DEL devices.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 17, 2015
- Source ID
- 10.1063/1.4928751
Entities
People
- Evgeny Mikheev
- Santosh Raghavan
- Susanne Stemmer
Organizations
- National Science Foundation
- Office of Naval Research
- University of California