Preserving the 7 × 7 surface reconstruction of clean Si(111) by graphene adsorption

Abstract

We employ room-temperature ultrahigh vacuum scanning tunneling microscopy and ab-initio calculations to study graphene flakes that were adsorbed onto the Si(111)–7 × 7 surface. The characteristic 7 × 7 reconstruction of this semiconductor substrate can be resolved through graphene at all scanning biases, thus indicating that the atomistic configuration of the semiconducting substrate is not altered upon graphene adsorption. Large-scale ab-initio calculations confirm these experimental observations and point to a lack of chemical bonding among interfacial graphene and silicon atoms. Our work provides insight into atomic-scale chemistry between graphene and highly reactive surfaces, directing future passivation and chemical interaction work in graphene-based heterostructures.

Document Details

Document Type
Pub Defense Publication
Publication Date
Aug 17, 2015
Source ID
10.1063/1.4928930

Entities

People

  • Cedric M. Horvath
  • Joseph W Lyding
  • Joshua D. Wood
  • Justin C. Koepke
  • Salvador Barraza-lopez

Organizations

  • National Science Foundation
  • Office of Naval Research
  • University of Arkansas
  • University of Illinois Urbana–Champaign

Tags

Fields of Study

  • Physics

Readers

  • Quantum Chemistry
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene