Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs
Abstract
Proton-induced damage in AlGaN/GaN HEMTs was investigated using energy-dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM), and simulated using a Monte Carlo technique. The results were correlated to electrical degradation using Hall measurements. It was determined by EDS that the interface between GaN and AlGaN in the irradiated HEMT was broadened by 2.2 nm, as estimated by the width of the Al EDS signal compared to the as-grown interface. The simulation results show a similar Al broadening effect. The extent of interfacial roughening was examined using high resolution TEM. At a 2 MeV proton fluence of 6 × 1014 H+/cm2, the electrical effects associated with the Al broadening and surface roughening include a degradation of the ON-resistance and a decrease in the electron mobility and 2DEG sheet carrier density by 28.9% and 12.1%, respectively.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 24, 2015
- Source ID
- 10.1063/1.4929583
Entities
People
- Andrew D. Koehler
- Bradley D. Weaver
- Francis J. Kub
- Jordan D. Greenlee
- Karl D. Hobart
- Martina Luysberg
- Oscar D. Dubon
- Petra Specht
- Todd R. Weatherford
- Travis J. Anderson
Organizations
- Defense Threat Reduction Agency
- Naval Postgraduate School
- United States Department of Energy
- United States Naval Research Laboratory
- University of California, Berkeley