Radio frequency reflectometry and charge sensing of a precision placed donor in silicon
Abstract
We compare charge transitions on a deterministic single P donor in silicon using radio frequency reflectometry measurements with a tunnel coupled reservoir and DC charge sensing using a capacitively coupled single electron transistor (SET). By measuring the conductance through the SET and comparing this with the phase shift of the reflected radio frequency (RF) excitation from the reservoir, we can discriminate between charge transfer within the SET channel and tunneling between the donor and reservoir. The RF measurement allows observation of donor electron transitions at every charge degeneracy point in contrast to the SET conductance signal where charge transitions are only observed at triple points. The tunnel coupled reservoir has the advantage of a large effective lever arm (∼35%), allowing us to independently extract a neutral donor charging energy ∼62 ± 17 meV. These results demonstrate that we can replace three terminal transistors by a single terminal dispersive reservoir, promising for high bandwidth scalable donor control and readout.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 31, 2015
- Source ID
- 10.1063/1.4929827
Entities
People
- Daniel Widmann
- Eldad Peretz
- Jan Verduijn
- Matthew G House
- Michelle Y. Simmons
- Samuel Hile
- Sven Rogge
- Takashi Kobayashi
Organizations
- Army Research Office
- Australian Research Council
- University of New South Wales