Transport through an impurity tunnel coupled to a Si/SiGe quantum dot
Abstract
Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here, we report the characterization of a quantum dot coupled to a localized electronic state and present evidence of controllable coupling between the quantum dot and the localized state. A set of measurements of transport through the device enable the determination that the most likely location of the localized state is consistent with a location in the quantum well near the edge of the quantum dot. Our results are consistent with a gate-voltage controllable tunnel coupling, which is an important building block for hybrid donor and gate-defined quantum dot devices.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 07, 2015
- Source ID
- 10.1063/1.4930909
Entities
People
- André Saraiva
- Brandur Thorgrimsson
- D. E. Savage
- Daniel R. Ward
- Erik Nielsen
- J. R. Prance
- John King Gamble
- M. A. Eriksson
- Mark Friesen
- Ryan H Foote
- S. N. Coppersmith
Organizations
- Army Research Office
- Federal University of Rio de Janeiro
- National Science Foundation
- Sandia National Laboratories
- University of Lancaster
- University of Wisconsin–Madison