Ultraviolet-enhanced photodetection in a graphene/SiO2/Si capacitor structure with a vacuum channel

Abstract

We report photodetection properties of a graphene/oxide/silicon capacitor structure with a nanoscale vacuum channel. The photogenerated two-dimensional electron gas (2DEG) inversion charges at SiO2/Si interface are extracted out to air and transported along the void channel at low bias voltage (<5 V). A monolayer graphene, placed on top of SiO2 and suspended on the void channel, is utilized as a photon-transparent counter-electrode to the 2DEG layer and a collector electrode for the out-of-plane transported electrons, respectively. The photocurrent extracted through a void channel reveals high responsivity (1.0 A/W at 633 nm) as measured in a broad spectral range (325–1064 nm), especially demonstrating a UV-enhanced performance (0.43 A/W responsivity and 384% internal quantum efficiency at 325 nm). The mechanisms underlying photocarrier generation, emission, and transport in a suspended-graphene/SiO2/Si structure are proposed.

Document Details

Document Type
Pub Defense Publication
Publication Date
Sep 14, 2015
Source ID
10.1063/1.4930931

Entities

People

  • Hong Koo Kim
  • Myungji Kim

Organizations

  • National Science Foundation
  • Office of Naval Research
  • University of Pittsburgh

Tags

Fields of Study

  • Physics

Readers

  • Plasma Physics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing