Nanoscale phase change memory with graphene ribbon electrodes
Abstract
Phase change memory (PCM) devices are known to reduce in power consumption as the bit volume and contact area of their electrodes are scaled down. Here, we demonstrate two types of low-power PCM devices with lateral graphene ribbon electrodes: one in which the graphene is patterned into narrow nanoribbons and the other where the phase change material is patterned into nanoribbons. The sharp graphene “edge” contacts enable switching with threshold voltages as low as ∼3 V, low programming currents (<1 μA SET and <10 μA RESET) and OFF/ON resistance ratios >100. Large-scale fabrication with graphene grown by chemical vapor deposition also enables the study of heterogeneous integration and that of variability for such nanomaterials and devices.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 21, 2015
- Source ID
- 10.1063/1.4931491
Entities
People
- Andrea Cappelli
- Ashkan Behnam
- Austin S. Lyons
- Carlo Jacoboni
- Edmond K. Chow
- Enrico Piccinini
- Enrique A Carrion
- Eric Pop
- Feng Xiong
- Ning C. Wang
- Sungduk Hong
- Yuan Dai
Organizations
- Air Force Office of Scientific Research
- Office of Naval Research
- Semiconductor Research Corporation
- Stanford University
- University of Bologna
- University of Illinois Urbana–Champaign
- University of Modena and Reggio Emilia