High power cascaded mid-infrared InAs/GaSb light emitting diodes on mismatched GaAs
Abstract
InAs/GaSb mid-wave, cascaded superlattice light emitting diodes are found to give higher radiance when epitaxially grown on mismatched GaAs substrates compared to lattice-matched GaSb substrates. Peak radiances of 0.69 W/cm2-sr and 1.06 W/cm2-sr for the 100 × 100 μm2 GaSb and GaAs-based devices, respectively, were measured at 77 K. Measurement of the recombination coefficients shows the shorter Shockley-Read-Hall recombination lifetime as misfit dislocations for growth on GaAs degrade the quantum efficiency only at low current injection. The improved performance on GaAs was found to be due to the higher transparency and improved thermal properties of the GaAs substrate.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 28, 2015
- Source ID
- 10.1063/1.4931914
Entities
People
- John Prineas
- R. Ricker
- Sydney Provence
- Thomas F. Boggess
- Yigit Aytac
Organizations
- Missile Defense Agency
- University of Iowa