Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy
Abstract
Thin films of the wide bandgap quaternary semiconductor InxAlyGa(1−x−y)N with low In (x = 0.01–0.05) and high Al composition (y = 0.40–0.49) were synthesized on GaN templates by plasma-assisted molecular beam epitaxy. High-resolution X-ray diffraction was used to correlate the strain accommodation of the films to composition. Room temperature ultraviolet B (280 nm–320 nm) photoluminescence intensity increased with increasing In composition, while the Stokes shift remained relatively constant. The data suggest a competition between radiative and non-radiative recombination occurs for carriers, respectively, localized at centers produced by In incorporation and at dislocations produced by strain relaxation.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 28, 2015
- Source ID
- 10.1063/1.4931942
Entities
People
- A. S. Brown
- A. T. Roberts
- H. O. Everitt
- J. Fournelle
- M. Losurdo
- T. H. Kim
- W. Y. Jiao
- Weimeng Kong
Organizations
- Duke University
- National Science Foundation
- Office of Naval Research
- University of Wisconsin–Madison