Demonstration of long minority carrier lifetimes in very narrow bandgap ternary InAs/GaInSb superlattices
Abstract
Minority carrier lifetimes in very long wavelength infrared (VLWIR) InAs/GaInSb superlattices (SLs) are reported using time-resolved microwave reflectance measurements. A strain-balanced ternary SL absorber layer of 47.0 Å InAs/21.5 Å Ga0.75In0.25Sb, corresponding to a bandgap of ∼50 meV, is found to have a minority carrier lifetime of 140 ± 20 ns at ∼18 K. This lifetime is extraordinarily long, when compared to lifetime values previously reported for other VLWIR SL detector materials. This enhancement is attributed to the strain-engineered ternary design, which offers a variety of epitaxial advantages and ultimately leads to a reduction of defect-mediated recombination centers.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 28, 2015
- Source ID
- 10.1063/1.4932056
Entities
People
- B. V. Olson
- E. A. Kadlec
- E. A. Shaner
- G. J. Brown
- H. J. Haugan
- J. K. Kim
Organizations
- Air Force Research Laboratory
- Sandia National Laboratories