Electronic transition above room temperature in CaMn7O12 films

Abstract

We report on the electronic phase transition in CaMn7O12 quadruple perovskite films synthesized by oxide molecular beam epitaxy on SrLaAlO4 and La0.3Sr0.7Al0.65Ta0.35O3 substrates. We use x-ray diffraction and transmission electron microscopy to confirm that the CaMn7O12 phase has been realized. Temperature dependent resistivity measurements reveal a signature of a charge ordering phase transition at ≈425 K, consistent with bulk CaMn7O12. The transition temperature is found to be relatively invariant to changes in the cation stoichiometry. Density functional theory calculations reveal the changes in atomic and electronic structure induced by the charge ordering transition.

Document Details

Document Type
Pub Defense Publication
Publication Date
Oct 05, 2015
Source ID
10.1063/1.4932132

Entities

People

  • A. Huon
  • A. M. Rappe
  • Andrew C. Lang
  • D. Saldana-greco
  • E. J. Moon
  • J. S. Lim
  • Mitra L. Taheri
  • S. J. May

Organizations

  • Army Research Office
  • Drexel University
  • National Science Foundation
  • Office of Naval Research
  • United States Department of Energy
  • University of Pennsylvania

Tags

Fields of Study

  • Materials science
  • Physics

Readers

  • Nanofabrication and Microfabrication.
  • Quantum Chemistry
  • Superconducting Magnet Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene