Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time
Abstract
An experimental determination is presented of the effect the quantum-well lifetime has on a large-signal resonant tunneling diode (RTD) switching time. Traditional vertical In0.53Ga0.47As/AlAs RTDs were grown, fabricated, and characterized. The switching time was measured with a high-speed oscilloscope and found to be close to the sum of the calculated RC-limited 10%–90% switching time and the quantum-well quasibound-state lifetime. This method displays experimental evidence that the two intrinsic resonant-tunneling characteristic times act independently, and that the quasibound-state lifetime then serves as a quantum-limit on the large-signal speed of RTDs.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 12, 2015
- Source ID
- 10.1063/1.4933258
Entities
People
- E. R. Brown
- Paul R. Berger
- Ravi Droopad
- Tyler A Growden
- Weidong Zhang
Organizations
- National Science Foundation
- Office of Naval Research
- Ohio State University
- Texas State University
- Wright State University